FDG6318P
January 2003
FDG6318P
Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital
transistors and small signal MOSFETS.
Features
• –0.
5 A, –20 V.
RDS(ON) = 780 mΩ @ VGS = –4.
5 V RDS(ON) = 1200 mΩ @ VGS = –2.
5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) 1.
5V).
• Compact industry standard SC70-6 surface mount package
Applications
• Battery ma...