FDT439N
June 1999
FDT439N
N-Channel 2.
5V Specified Enhancement Mode Field Effect
Transistor
General Description
This N-Channel Enhancement mode field effect
transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.
These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
6.
3 A, 30 V.
RDS(on) = 0.
045 Ω @ VGS = 4.
5 V RDS(on) = 0.
058 Ω @ VGS = 2.
5 V Fast switching speed.
High power and current handl...