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FDT439N

ON Semiconductor
Part Number FDT439N
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description DATA SHEET www.onsemi.com Transistor, N-Channel, Field Effect, Enhancement Mode, 2.5 V Specified FDT439N General Descri...
Datasheet PDF File FDT439N PDF File

FDT439N
FDT439N

Overview
DATA SHEET www.
onsemi.
com Transistor, N-Channel, Field Effect, Enhancement Mode, 2.
5 V Specified FDT439N General Description This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance.
These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features • 6.
3 A, 30 V RDS(on) = 0.
045 W @ VGS = 4.
5 V RDS(on) = 0.
058 W @ VGS = 2.
5 V • Fast switching speed.
• High power and current handling capability in a widely used surface mount package.
• This Device is Pb−Free Applications • DC/DC Converter • Load Switch • Motor Driving VDSS 30 V RDS(ON) MAX 0.
045 W @ 4.
5 V 0.
058 W @ 2.
5 V ID MAX 6.
3 A D S D G SOT−223 CASE 318H MARKING DIAGRAM AYW 439G G 1 A = Specific Device Code Y = Date Code W = Work Week 439 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous (Note 1a) 6.
3 A − Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 3 W (Note 1b) 1.
3 (Note 1c) 1.
1 TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) RqJC Thermal Resistance, Junction−to−Case (Note 1) Ratings 42 Unit °C/W 12 °C/W PINOUT D G D S ORDERING INFORMATION See detailed ordering and shipping information on p...


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