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FDT434P

ON Semiconductor
Part Number FDT434P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 25, 2023
Detailed Description FDT434P FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET...
Datasheet PDF File FDT434P PDF File

FDT434P
FDT434P

Overview
FDT434P FDT434P P-Channel 2.
5V Specified PowerTrench MOSFET General Description This P-Channel 2.
5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications • Low Dropout Regulator • DC/DC converter • Load switch • Motor driving Features • –5.
5 A, –20 V.
RDS(ON) = 0.
050 Ω @ VGS = –4.
5 V RDS(ON) = 0.
070 Ω @ VGS = –2.
5 V.
• Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability in a widely used surface mount package.
D D SOT-22 3 S D G G D S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 434 FDT434P 13’’ Ratings –20 ±8 –6 –30 3 1.
3 1.
1 -55 to +150 42 12 Tape width 12mm Units V V A W °C °C/W °C/W Quantity 2500 units ©2011 Semiconductor Components Industries, LLC.
1 October-2017, Rev.
3 Publication Order Number: FDT434P/D FDT434P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage Current, Forward IGSSR Gate–Body Leakage Current, Reverse VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = –8 V VDS = 0 V On Characteri...


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