MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION FA01219A is RF Hybrid IC designed for 0.
8GHz band small size handheld radio.
1 Unit:mm GND 8 FEATURES • Low voltage • High gain • High efficiency • High power 3.
5V 22.
5B 50% 30.
5dBm 2 7 3 6 4 5 APPLICATION PDC0.
8GHz GND 10.
0 0.
8 2.
0 6.
0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:±0.
2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature Storage temperature Condition Po≤30.
5dBm ZG=ZL=50Ω Tc 25˚C 25˚C – – Ratings 4.
5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and ...

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