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FA01219A

Mitsubishi Electric Semiconductor
Part Number FA01219A
Manufacturer Mitsubishi Electric Semiconductor
Description GaAs FET HYBRID IC
Published Mar 30, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION FA01219A is RF Hybrid IC designed for 0.8GHz...
Datasheet PDF File FA01219A PDF File

FA01219A
FA01219A

Overview
MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION FA01219A is RF Hybrid IC designed for 0.
8GHz band small size handheld radio.
1 Unit:mm GND 8 FEATURES • Low voltage • High gain • High efficiency • High power 3.
5V 22.
5B 50% 30.
5dBm 2 7 3 6 4 5 APPLICATION PDC0.
8GHz GND 10.
0 0.
8 2.
0 6.
0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:±0.
2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature Storage temperature Condition Po≤30.
5dBm ZG=ZL=50Ω Tc 25˚C 25˚C – – Ratings 4.
5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation.
T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25˚C) Symbol Parameter Test conditions Min 925 – – – – – – – Limits Typ – 5 640 – – – – – Max 958 8 720 -6 -47 -62 -30 -30 Unit MHz dBm mA dB dBc dBc dBc dBc f Frequency Input power Pin IDt Total drain current Return loss ρin ±50kHz adjacent channel power ACP50 ACP100 ±100kHz adjacent channel power 2nd harmonics 2fo 3rd harmonics 3fo Po=30.
5dBm VD1=VD2=3.
5V VG1,2=-2.
5V ZG=ZL=50Ω (π/4DQPSK) Ditto (CW) Nov.
´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 1 Frequency (MHz) 925.
0 941.
5 958.
0 Pin (dBm) 5.
78 6.
05 6.
52 Po (dBm) 30.
5 30.
5 30.
5 Id1 (mA) 93 90 91 Id2 (mA) 552 547 543 Idt (mA) 644 637 634 Ig1,2 (mA) -1.
86 -1.
86 -1.
86 -50k (dBc) -49.
9 -51.
7 -51.
6 +50k (dBc) -49.
2 -51.
2 -51.
6 -100k (dBc) -62.
5 -63.
6 -64.
4 VD1=3.
5V,VD2=3.
5V,VG=-2.
5V +100k 2SP 3SP RL (dBc) (dBc) (dBc) (dB) -62.
6 -37.
5 -49.
2 -10.
7 -64.
1 -37.
4 -49.
7 -9.
4 -64.
6 -37.
2 -50.
2 -8.
5 PO,ACP vs Pin CHARACTERISTICS 35 -30 f=925MHz VD1=3.
5V VD2=3.
5V VG=-2.
5V 35 PO,IDs vs Pin CHARACTERSTICS 1000 900 -40 30 PO 800 700 -50 25 IDt ID2 600 500 400 300 30 PO ACP+50k ACP-50k 25 20 -60 ACP+100k ACP-100k -70 20 15 15 ID1 200 100 0 10 10 -5.
0 0.
0 5.
0 -80 10.
0 10 -5 0 5 Pin(dBm) Pin(dBm) Nov.
´97 MITSUBI...


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