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FA01215

Mitsubishi Electric Semiconductor
Part Number FA01215
Manufacturer Mitsubishi Electric Semiconductor
Description GaAs FET HYBRID IC
Published Mar 30, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz b...
Datasheet PDF File FA01215 PDF File

FA01215
FA01215

Overview
MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio.
0.
6 2 3.
5 14.
7 14.
2 2 3.
5 2 Unit:mm FEATURES • Low voltage • High gain • High efficiency • High power 3.
0V 24dB(typ.
) 50% 34.
5dBm 6 APPLICATION GSM IV 1 2 3 4 5 2.
25 2.
5 2.
5 2.
5 2.
5 1.
95 0.
25±0.
1 1 2 3 0.
5±0.
15 4 5 6 RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN) ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature.
Storage temperature.
Condition PO≤34.
5dBm ZG=ZL=50Ω Ta 25˚C 25˚C – – Ratings 4.
5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and P.
W.
=580µs,duty=1/8 operation.
ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f PO ht Igt rin 2fo,3fo OSC.
T VSWR.
T Parameter Frequency Output power Total efficiency Total gate current Return loss 2nd harmonics, 3rd harmonics Stability Load VSWR tolerance Test conditions Limi...


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