FQB6N60 / FQI6N60
April 2000
QFET
FQB6N60 / FQI6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM
Features
• • • • • • 6.
2A, 600V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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