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FQI6N90

Fairchild Semiconductor
Part Number FQI6N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhan...
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FQI6N90
FQI6N90

Overview
FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 5.
8A, 900V, RDS(on) = 1.
9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB6N90 / FQI6N90 900 5.
8 3.
7 23.
2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 712 5.
8 16.
7 4.
0 3.
13 167 1.
34 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 0.
75 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQB6N90 / FQI6N90 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ ...


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