FQP4N80
September 2000
QFET
FQP4N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM
Features
• • • • • • 3.
9A, 800V, RDS(on) = 3.
6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.
6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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