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FQP4N80

Fairchild Semiconductor
Part Number FQP4N80
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP4N80 September 2000 QFET FQP4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File FQP4N80 PDF File

FQP4N80
FQP4N80

Overview
FQP4N80 September 2000 QFET FQP4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 3.
9A, 800V, RDS(on) = 3.
6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.
6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP4N80 800 3.
9 2.
47 1...


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