Ordering number:EN3139
NPN Epitaxial Planar Silicon
Transistors
2SC4520
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Package Dimensions
unit:mm 2038A
[2SC4520]
4.
5 1.
6
1.
5
1.
0 2.
5 4.
25max
0.
4 0.
5
32 1.
5
1
3.
0
0.
75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic ...