Power
Transistors
2SC5104
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.
5±0.
2
Unit: mm
3.
4±0.
3
6.
0±0.
2
1.
0±0.
1
■ Features
3.
0–+00.
.
24 4.
4±0.
5
14.
4±0.
5
10.
0±0.
3 1.
5±0.
1
• High-speed switching
1.
5–+00.
4
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the
/ printed circuit board, etc.
of small electronic equipment
4.
4±0.
5 2.
0±0.
5
0 to 0.
4
0.
8±0.
1
2.
54±0.
3 1.
4±0.
1 5.
08±0.
5
R = 0.
5 R = 0.
5
1.
0±0.
1
0.
4±0.
1
123
(8.
5) (6.
0) 1.
3
■ Absolute Maximum Ratings TC = 25°C
e e) Parameter...