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2SC5103

Rohm
Part Number 2SC5103
Manufacturer Rohm
Description High speed switching transistor
Published Apr 3, 2005
Detailed Description 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB ...
Datasheet PDF File 2SC5103 PDF File

2SC5103
2SC5103

Overview
2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ.
0.
15V at IC / IB = 3 / 0.
15A) 2) High speed switching (tf : Typ.
0.
1 µs at IC = 3A) 3) Wide SOA.
(safe operating area) 4) Complements the 2SA1952.
!External dimensions (Units : mm) 0.
75 5.
5 1.
5 (3) (2) (1) 2.
3 0.
9 0.
9 0.
65 2.
3 5.
1 6.
5 C0.
5 1.
0 0.
5 0.
5 1.
5 2.
5 9.
5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °C Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 60 5 5 10 1 10 150 −55~+150 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 PQ TL 2500 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time ∗ Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min.
100 60 5 − − − − − − 82 − − − − − Typ.
− − − − − 0.
15 − − − − 120 80 − − 0.
1 Max.
− − − 10 10 0.
3 0.
5 1.
2 1.
5 270 − − 0.
3 1.
5 0.
3 Unit V V V µA µA V V V V − MHz pF µs µs µs Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 100V VEB = 5V IC/IB = 3A/0.
15A IC/IB = 4A/0.
2A IC/IB = 3A/0.
15A IC/IB = 4A/0.
2A VCE/IC = 2V/1A VCB = 10V , IE = 0.
5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10Ω IB1 = −IB2 = 0.
15A VCC 30V ∗ ∗ ∗ ∗ ∗ 2.
3 0.
8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior perm...


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