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2SC5104

Panasonic Semiconductor
Part Number 2SC5104
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.5...
Datasheet PDF File 2SC5104 PDF File

2SC5104
2SC5104

Overview
Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.
5±0.
2 Unit: mm 3.
4±0.
3 6.
0±0.
2 1.
0±0.
1 ■ Features 3.
0–+00.
.
24 4.
4±0.
5 14.
4±0.
5 10.
0±0.
3 1.
5±0.
1 • High-speed switching 1.
5–+00.
4 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the / printed circuit board, etc.
of small electronic equipment 4.
4±0.
5 2.
0±0.
5 0 to 0.
4 0.
8±0.
1 2.
54±0.
3 1.
4±0.
1 5.
08±0.
5 R = 0.
5 R = 0.
5 1.
0±0.
1 0.
4±0.
1 123 (8.
5) (6.
0) 1.
3 ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit (7.
6) (1.
5) c e.
d typ Collector-base voltage (Emitter open) VCBO 500 V n d stag tinue Collector-emitter voltage (E-B short) VCES 500 V a e cle con Collector-emitter voltage (Base open) VCEO 400 V lifecy , dis Emitter-base voltage (Collector open) VEBO 7 V n u ct ped Base current IB 1.
2 A te tin Produ ed ty Collector current IC 3 A ur tinu Peak collector current ICP 6 A ing fo iscon Collector power dissipation PC 30 W in n llow d d Ta = 25°C 1.
3 s fo lane Junction temperature Tj 150 °C a o lude e, p Storage temperature Tstg −55 to +150 °C (6.
5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.
c tinued inncance typ ■ Electrical Characteristics TC = 25°C ± 3°C M is con inte Parameter Symbol Conditions /Dis , ma Collector-emitter voltage (Base open) D ance type Collector-base cutoff current (Emitter open) inten nce Emitter-base cutoff current (Collector open) Ma tena Forward current transfer ratio ed main Collector-emitter saturation voltage (plan Base-emitter saturation voltage VCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) IC = 10 mA, IB = 0 VCB = 500 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.
1 A VCE = 1 V, IC = 1 A IC = 1.
5 A, IB = 0.
3 A IC = 1.
5 A, IB = 0.
3 A Min T...


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