TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
• High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
)
(IC = 20 mA, IB = 0.
5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 400 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
DC Pulse
IC
50 mA
ICP 100
Base current
IB 25 mA
Collector power dissipation
PC
900 mW
JEDEC
TO-92MOD
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-5J1A
Note1: Using continuously under heavy loads (e.
...