DATA SHEET
SILICON
TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON
TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
2
• Low current consumption and high gain
S21e = 12 dB TYP.
@ VCE = 2 V, IC = 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm) 2.
1 ± 0.
2 1.
25 ± 0.
1
• Supper Mini-Mold package
S21e 2 = 11 dB TYP.
@ VCE = 1 V, IC = 5 mA, f = 2 GHz
0.
3 +0.
1 –0.
05
2.
0 ± 0.
2
QUANTITY
ARRANGEMENT Embossed tape, 8 mm wide, pins No.
3 (base) and No.
4 (emitter) facing the perforations Embossed tape, 8 mm wide, pins No.
1 (collector) and No.
2 (emitter) facing the perforations
0.
65
(1.
25)
2SC5180–T1 3 000 units/reel 2SC5180–T2
0.
60
0.
4 +0.
1 –0.
05
* Contac...