DATA SHEET
SILICON
TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON
TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 10.
5 dBTYP.
@ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 9.
0 dBTYP.
@VCE = 1 V, IC = 5 mA, f = 2 GHz • Ultra Super Mini-Mold package
PACKAGE DIMENSIONS (Units: mm)
1.
6 ± 0.
1 0.
8 ± 0.
1 2 1.
6 ± 0.
1 0.
2 +0.
1 –0 0.
5 0.
3 +0.
1 –0 0.
15 +0.
1 –0.
05
ORDERING INFORMATION
PART NUMBER 2SC5181 2SC5181-T1 QUANTITY 50 units/box 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No.
3 (collector) facing the perforation 1.
0
84
0.
5
3
1
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