PRELIMINARY DATA SHEET
Silicon
Transistor
2SC5336
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
•
PACKAGE DIMENSIONS
(in millimeters)
4.
5±0.
1 1.
6±0.
2 1.
5±0.
1
•
High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
2
Symbol VCBO VCEO VEBO IC
Note1 PT
Rating 20 12 3.
0 100 1.
2 150 –65 to +150
Unit
0.
8MIN.
C E B E
V V V mA W °C °C
0.
42 ±0.
06 1.
5 3.
0...