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2SC5307

Toshiba Semiconductor
Part Number 2SC5307
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • Hig...
Datasheet PDF File 2SC5307 PDF File

2SC5307
2SC5307

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 20 mA, IB = 0.
5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 400 400 7 50 100 25 500 1000 150 −55 to 150 Note: Mounted on a ceramic substrate (250 mm2 × 0.
8 t) Unit V V V mA mA mW °C °C Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE Cob Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.
5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Min Typ.
Max Unit ― ― 1 µA ― ― 1 µA 400 ― ― V 80 ― ― 100 ― 300 ― 0.
4 1.
0 V ― 0.
7 0.
85 V ― 4.
0 ― pF Marking Part No.
(or abbreviation code) AL Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-07 Collector current IC (mA) Common emitter 50 Ta = 25°C 40 30 IC – VCE 1 mA 900 800 700 600 500 400 300 200 20 10 IB = 50 µA 100 0 2 4 6 8 10 Collector-emitter voltage VCE (V) DC current gain hFE 2SC5307 100 30 10 3 1 0.
1 hFE – IC Tc = 100°C Common emitter VCE = 10 V 25 −25 1 10 Collector current IC (mA) 100 Collector-emitter saturation voltage VCE (sat) (mV) VCE (sat) – IC 280 Common emitter 240 IC/IB = 5 200 160 Tc = 100°C 120 25 80 −25 40 0 0 10 20 30 40 Collector current IC (mA) 5...


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