TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications Switching
Regulator Applications DC-DC Converter Applications
Unit: mm
• Excellent switching times: tf = 0.
5 μs (max) (IC = 1.
2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.
15 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 3 5 ...