PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
2SC5369
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE AMPLIFICATION
FEATURES
• High f T 14 GHz TYP.
• High gain | S 21 e | 2 = 14 dB TYP.
• NF = 1.
3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA • 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA
PACKAGE DIMENSION (in mm)
2.
1±0.
1 1.
25±0.
1
0.
2 –0
+0.
1
1
0.
65 0.
65
2.
0±0.
2
1.
3
2
3
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)
0.
9±0.
1
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL V CBO V CEO V EBO IC PT TI T stg
RATING 9 6 2 30 150 150 –65 to +150
UNIT V V V ...