Power
Transistors
2SC5517
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.
5±0.
5 φ 3.
2±0.
1
Unit: mm
3.
0±0.
3 5˚
5˚
(4.
5)
26.
5±0.
5 (2.
0)
(1.
2) (10.
0)
(23.
4) 22.
0±0.
5
I Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer • High-speed switching • Wide area of safe operation (ASO)
5˚
(4.
0)
5˚
2.
0±0.
2
5˚
/ 1.
1±0.
1
0.
7±0.
1
I Absolute Maximum Ratings TC = 25°C
5.
45±0.
3
e ) Parameter
Symbol Rating
Unit
18.
6±0.
5 (2.
0)
Solder Dip
c type Collector to base voltage
VCBO
1 700
V
3.
3±0.
3
5.
5±0.
3
n d ge.
ed Collector to emitter voltage
VCES
1 700
(2.
0)
V
sta tinu Emitter to base voltage
VEBO
7
V
...