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2SC5508

NEC
Part Number 2SC5508
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICAT...
Datasheet PDF File 2SC5508 PDF File

2SC5508
2SC5508

Overview
PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.
1 dB, Ga = 16 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.
59 mm) ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style • 8 mm wide emboss taping • 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.
3 1.
5 35 115 150 –65 to +150 Unit V V V mA mW °C °C Tj Tstg Note TA = +25 °C (free air) THERMAL RESISTANCE Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 150 650 Unit °C/W °C/W Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No.
P13865EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan © 1999 2SC5508 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product Noise Figure Insertion Power Gain Maximum Available Power Gain Maximum Stable Power Gain Output Power at 1 dB Compression Point Output Power at Third Order Intercept Point Cre Note 2 Symbol Test Conditions MIN.
TYP.
MAX.
Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE...


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