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2SC5508

UTC
Part Number 2SC5508
Manufacturer UTC
Description NPN SILICON RF TRANSISTOR
Published Apr 11, 2024
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SC5508 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON RF TRANSISTOR „ DES...
Datasheet PDF File 2SC5508 PDF File

2SC5508
2SC5508

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SC5508 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON RF TRANSISTOR „ DESCRIPTION The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc.
The UTC 2SC5508 is suitable for low-noise, high-gain amplification applications.
„ FEATURES * Maximum available power gain: MAG=19dB TYP.
@ VCE=2V, IC=20mA, f=2GHz * fT=25GHz technology adopted „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5508L-x-AL6-R 2SC5508G-x-AL6-R SOT-363 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment 123456 Packing E1 B1 C2 E2 B2 C1 Tape Reel 2SC5508G-x-AL6-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package (1) R: Tape Reel (2) AL6: SOT-363 (2) x: reference to Classification of hFE (4) G: Halogen Free and Lead Free, L: Lead Free „ MARKING www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R221-039.
b 2SC5508 Preliminary NPN EPITAXIAL SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 3.
3 V Emitter-Base Voltage VEBO 1.
5 V Collector Current Power Dissipation IC 35 mA PD 115 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient Resistance θJA Junction to Case Resistance θJC „ ELECTRICAL CHARACTERISTICS (TA=+25°C) RATINGS 650 150 UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DC CHARACTERISTICS Collector Cut-off Current ICBO VCB=5V, IE=0 200 nA Emitter Cut-Off Current DC Current Gain (Note 1) IEBO VEB=1V, IC=0 hFE VCE=2V, IC...


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