Power
Transistors
2SC5519
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.
5±0.
5
4.
5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C)
Ratings 1700 1700 5 16 8 3 50 3 150 –55 to +150 Unit V V V A A A W ˚C ˚C
10.
0
s Features
φ3.
2±0.
1 5°
26.
5±0.
5
3.
0±0.
3 5°
23.
4 22.
0±0.
5
2.
0 1.
2
5°
18.
6±0.
5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage te...