TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5550
High-Speed Switching Application for Inverter Lighting System
2SC5550
Unit: mm
• Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA)
• High speed: tr = 0.
5 µs (max), tf = 0.
3 µs (max) (IC = 0.
24 A) • High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
400 400
7 1 2 0.
5 1.
5 10 150 −55 to 150
Unit V V V
A
A...