Ordering number:ENN6328
NPN Epitaxial Planar Silicon
Transistor
2SC5551
High-Frequency Medium-Output Amplifier Applications
Features
· High fT : (fT=3.
5GHz typ).
· Large current : (IC=300mA).
· Large allowable collector dissipation (1.
3W max).
Package Dimensions
unit:mm 2038A
[2SC5551]
4.
5 1.
6 1.
5
0.
5 3 1.
5 2 3.
0 0.
75 1
1.
0
0.
4
2.
5 4.
25max
0.
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2× 0.
8mm) Conditions
1...