Power
Transistors
2SC5591
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15.
5±0.
5 φ 3.
2±0.
1 5˚
3.
0±0.
3 5˚
(4.
5)
26.
5±0.
5 (2.
0)
(1.
2) (10.
0)
(23.
4) 22.
0±0.
5
• High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
• High-speed switching: Fall time tf 0.
2 µs • Low collector-emitter saturation voltage: Collector-emitter satura-
tion voltage VCE(sat) 3 V • Wide safe operation area
5˚
(4.
0)
5˚
2.
0±0.
2
5˚
1.
1±0.
1
0.
7±0.
1
18.
6±0.
5 (2.
0)
Solder Dip
/ ■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
c e.
d typ Collector-base voltage (Emitter open) VCBO
1 700
3.
3±0.
3
5.
5±0.
...