Power
Transistors
2SC5597
Silicon
NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.
0) (6.
0) (2.
0) (4.
0)
20.
0±0.
5 φ 3.
3±0.
2
5.
0±0.
3 (3.
0)
20.
0±0.
5 (2.
5) Solder Dip
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO)
26.
0±0.
5
(3.
0)
(1.
5) 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 (1.
5) 2.
7±0.
3 1 2 3
I Features
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 2...