IXGH25N100U1

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC =...