DatasheetsPDF.com

IXGH25N100

IXYS Corporation
Part Number IXGH25N100
Manufacturer IXYS Corporation
Description High speed IGBT
Published Dec 12, 2008
Detailed Description VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4....
Datasheet PDF File IXGH25N100 PDF File

IXGH25N100
IXGH25N100


Overview
VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.
5 V 4.
0 V Symbol www.
DataSheet4U.
com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.
8 VCES 200 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min.
typ.
max.
1000 2.
5 TJ = 25°C TJ = 125°C 5 250 1 ±100 25N100 25N100A 3.
5 4.
0 V V µA mA nA V V Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 µA, VCE = VGE V CE = 0.
8 • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density © 1996 IXYS All rights reserved 91516E (3/96) IXGH 25N100 IXGH 25N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
8 15 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 200 50 130 IC = IC90, VGE = 15 V, VCE = 0.
5 VCES Inductive load, TJ = 25°C IC = IC90,...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)