Part Number
|
JDV2S01E |
Manufacturer
|
Toshiba Semiconductor |
Description
|
VCO for UHF band |
Published
|
Apr 7, 2005 |
Detailed Description
|
JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance ...
|
Datasheet
|
JDV2S01E
|
Overview
JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.
0 (typ.
) Low Series Resistance: rs = 0.
5 Ω (typ.
)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1G1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition
Weight: 0.
0014 g
Min 10 ¾ 2.
85 1.
35 1.
8 ...
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