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JDV2S01E

Toshiba Semiconductor
Part Number JDV2S01E
Manufacturer Toshiba Semiconductor
Description VCO for UHF band
Published Apr 7, 2005
Detailed Description JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm Small Package High Capacitance ...
Datasheet PDF File JDV2S01E PDF File

JDV2S01E
JDV2S01E

Overview
JDV2S01E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.
0 (typ.
) Low Series Resistance: rs = 0.
5 Ω (typ.
) · · · Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight: 0.
0014 g Min 10 ¾ 2.
85 1.
35 1.
8 ...


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