DatasheetsPDF.com

JDV2S08S

Toshiba Semiconductor
Part Number JDV2S08S
Manufacturer Toshiba Semiconductor
Description VCO for UHF Band Radio
Published Apr 7, 2005
Detailed Description JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V...
Datasheet PDF File JDV2S08S PDF File

JDV2S08S
JDV2S08S

Overview
JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 3.
0 (typ.
) Low Series Resistance : rs = 0.
35 Ω (typ.
) This device is suitable for use in a small-size tuner.
Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Con...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)