Part Number
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K7A403609A |
Manufacturer
|
Samsung semiconductor |
Description
|
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM |
Published
|
Apr 7, 2005 |
Detailed Description
|
K7A403609A K7A401809A
128Kx36 & 256Kx18 Synchronous SRAM
Document Title
128Kx36 & 256Kx18-Bit Synchronous Pipelined Bu...
|
Datasheet
|
K7A403609A
|
Overview
K7A403609A K7A401809A
128Kx36 & 256Kx18 Synchronous SRAM
Document Title
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev.
No History
0.
0 Initial draft
0.
1 Add tCYC 300MHz.
0.
2 1.
Changed DC condition at Icc and ISB.
Icc ; from 540mA to 590mA at -30, from 490mA to 540mA at -27, from 440mA to 490mA at -25, from 410mA to 460mA at -22, from 390mA to 440mA at -20, from 370mA to 420mA at -18,
ISB ; from 190mA to 200mA at -30, from 180mA to 190mA at -27, from 170mA to 180mA at -25, from 160mA to 170mA at -22, from 150mA to 160mA at -20, from 140mA to 150mA at -18,
1.
0 1.
Final spec release 2.
Changed input & output capacitance.
CIN ; from 6pF to 5pF, COUT ; from 8pF to...
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