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K7A403609A

Samsung semiconductor
Part Number K7A403609A
Manufacturer Samsung semiconductor
Description 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Published Apr 7, 2005
Detailed Description K7A403609A K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Pipelined Bu...
Datasheet PDF File K7A403609A PDF File

K7A403609A
K7A403609A

Overview
K7A403609A K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No History 0.
0 Initial draft 0.
1 Add tCYC 300MHz.
0.
2 1.
Changed DC condition at Icc and ISB.
Icc ; from 540mA to 590mA at -30, from 490mA to 540mA at -27, from 440mA to 490mA at -25, from 410mA to 460mA at -22, from 390mA to 440mA at -20, from 370mA to 420mA at -18, ISB ; from 190mA to 200mA at -30, from 180mA to 190mA at -27, from 170mA to 180mA at -25, from 160mA to 170mA at -22, from 150mA to 160mA at -20, from 140mA to 150mA at -18, 1.
0 1.
Final spec release 2.
Changed input & output capacitance.
CIN ; from 6pF to 5pF, COUT ; from 8pF to 7pF, 3.
Changed part number from K7A4036(18)00A -under 167MHz to K7A4036(18)09A -over183MHz 2.
0 1.
Changed Input setup at -275MHz and 300MHz From 0.
8ns to 0.
75ns, 3.
0 1.
Changed Input setup at -300MHz From 0.
75ns to 0.
6ns Draft Date Jan.
22.
2000 Feb.
10.
2000 April.
03.
2000 May.
15.
2000 August.
...


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