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K7A403600M

Samsung
Part Number K7A403600M
Manufacturer Samsung
Description 128K x 36 Synchronous SRAM
Published Aug 2, 2013
Detailed Description K7A403600M Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. ...
Datasheet PDF File K7A403600M PDF File

K7A403600M
K7A403600M

Overview
K7A403600M Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No.
0.
0 0.
1 0.
2 0.
3 History Initial draft Change 7.
5 bin to 7.
2 Change speed symbol 6.
0/6.
7/7.
2/8.
5 to 60/67/72/85 Draft Date May .
15.
1997 January .
13 .
1998 February.
02.
1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics VDD condition from VDD=3.
3V+10%/-5% Change February.
12.
1998 Input/output leackage currant for ±1µA to ±2µA Modify Read timing & Power down cycle timing.
Change ISB2 value from 30mA to 20mA.
Remove DC characteristics ISB1 - L ver.
& ISB2 - L ver .
Remove Low power version.
Add 119BGA(7x17 Ball Grid Array Package) Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIH max from 5.
5V to VDD+0.
5V March.
11 .
1998 0.
4 Preliminary 0.
5 April.
14.
1998 Preliminary 0.
6 May.
13.
1998 Change ISB2 value from 20mA to 30mA.
Change VDD condition from VDD=3.
3V+10%/-5% to VDD=3.
3V+0.
3V/-0.
165V.
http://www.
DataSheet4U.
com/ Preliminary 0.
7 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.
Final spec Release Add VDDQ Supply voltage( 2.
5V ) Remove 119BGA(7x17 Ball Grid Array Package) .
May.
14.
1998 Preliminary 1.
0 2.
0 3.
0 May.
15.
1998 Dec.
02.
1998 Nov.
26.
1999 Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1- November 1999 Rev 3.
0 This datasheet has been downloaded from http://www.
digchip.
com at this page K7A403600M 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES • Synchronous Operation.
• 2 ...


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