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IRF1010NL

Power MOSFET

Description

PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev...

International Rectifier

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