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IRF1010ES

INCHANGE
Part Number IRF1010ES
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 6, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan...
Datasheet PDF File IRF1010ES PDF File

IRF1010ES
IRF1010ES

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010ES ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 84 59 330 PD Total Dissipation 200 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
75 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010ES ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.
25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.
25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=50A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±20V;VDS= 0V VDS=60V; VGS= 0V;Tc=25℃ VDS=48V; VGS= 0V; Tc=150℃ ISD=50A, VGS = 0 V MIN TYP MAX UNIT 60 V 2.
0 4.
0 V 12 mΩ ±0.
1 μA 25 250 μA 1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or ...


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