Part Number
|
IRF1010Z |
Manufacturer
|
International Rectifier |
Description
|
AUTOMOTIVE MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Proces...
|
Datasheet
|
IRF1010Z
|
Overview
PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 55V RDS(on) = 7.
5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in...
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