Part Number
|
IRF2907ZL |
Manufacturer
|
International Rectifier |
Description
|
AUTOMOTIVE MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z IRF2907ZS IRF2907ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process...
|
Datasheet
|
IRF2907ZL
|
Overview
PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z IRF2907ZS IRF2907ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 75V RDS(on) = 4.
5mΩ
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use ...
Similar Datasheet