IRF350
Data Sheet March 1999 File Number 1826.
3
15A, 400V, 0.
300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect
transistor designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA9399.
Features
• 15A, 400V • rDS(ON) = 0.
300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature ...