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IRF3007

International Rectifier
Part Number IRF3007
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Apr 16, 2005
Detailed Description PD -94424A AUTOMOTIVE MOSFET Typical Applications ● IRF3007 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Sys...
Datasheet PDF File IRF3007 PDF File

IRF3007
IRF3007


Overview
PD -94424A AUTOMOTIVE MOSFET Typical Applications ● IRF3007 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Features ● ● ● ● ● VDSS = 75V G S RDS(on) = 0.
0126Ω ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max.
80 56 75 320 200 1.
3 ± 20 280 946 See Fig.
12a, 12b, 15, 16 -55 to + 175 Units A W W/°C V mJ A mJ °C 300 (1.
6mm from case ) 1.
1 (10) N•m (lbf•in) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
50 ––– Max.
0.
74 ––– 62 Units °C/W www.
irf.
com 1 9/16/02 IRF3007 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss ...



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