Part Number
|
IRF520VS |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 94306
HEXFET® Power MOSFET
l l l l l l l
IRF520VS IRF520VL
VDSS = 100V
Advanced Process Technology Ultra Low On-...
|
Datasheet
|
IRF520VS
|
Overview
PD - 94306
HEXFET® Power MOSFET
l l l l l l l
IRF520VS IRF520VL
VDSS = 100V
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications
D
RDS(on) = 0.
165Ω
G S
ID = 9.
6A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a sur...
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