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IRF520

Intersil Corporation
Part Number IRF520
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhance...
Datasheet PDF File IRF520 PDF File

IRF520
IRF520

Overview
IRF520 Data Sheet November 1999 File Number 1574.
4 9.
2A, 100V, 0.
270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09594.
Features • 9.
2A, 100V • rDS(ON) = 0.
270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF520 P...


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