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IRF520

INCHANGE
Part Number IRF520
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520 ·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Tech...
Datasheet PDF File IRF520 PDF File

IRF520
IRF520

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520 ·FEATURES ·Typical RDS(on) =0.
27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,Audio Amplifiers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 70 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
14 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Tr...


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