Part Number
|
IRF737LC |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 9.1314
PRELIMINARY
IRF737LC
VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A
HEXFET® Power MOSFET
Reduced Gate Drive Require...
|
Datasheet
|
IRF737LC
|
Overview
PD - 9.
1314
PRELIMINARY
IRF737LC
VDSS = 300V RDS(on) = 0.
75Ω ID = 6.
1A
HEXFET® Power MOSFET
Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.
In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possibl...
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