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IRF737LC

International Rectifier
Part Number IRF737LC
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A HEXFET® Power MOSFET Reduced Gate Drive Require...
Datasheet PDF File IRF737LC PDF File

IRF737LC
IRF737LC

Overview
PD - 9.
1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.
75Ω ID = 6.
1A HEXFET® Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.
In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possibl...


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