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IRF7379

Part Number	IRF7379
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half B...
Datasheet	IRF7379 PDF File

Overview

PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H AN N E L MO S FET RDS(on) 0.
045Ω 0.
090Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety o...

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